Impact of Sulfur Passivation on Carrier Transport Properties of In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs
We investigated the impact of a sulfur passivation (S-passivation) process step on carrier transport properties of surface-channel In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum-well (QW) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) with source/drain (S/D) regrowt...
Main Authors: | Jun-Gyu Kim, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Dae-Hyun Kim |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9348904/ |
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