Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Controlled doping with an effective carrier concentration higher than 10<sup>20</sup> cm<sup>&#8722;3</sup> is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts...

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Bibliographic Details
Main Authors: Slawomir Prucnal, Jerzy Żuk, René Hübner, Juanmei Duan, Mao Wang, Krzysztof Pyszniak, Andrzej Drozdziel, Marcin Turek, Shengqiang Zhou
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Materials
Subjects:
ge
ion implantation
flash lamp annealing
n-type doping
raman spectroscopy
Online Access:https://www.mdpi.com/1996-1944/13/6/1408

Internet

https://www.mdpi.com/1996-1944/13/6/1408

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