Nanoscale Characterization of V-Defect in InGaN/GaN QWs LEDs Using Near-Field Scanning Optical Microscopy

Nanoscale Characterization of V-Defect in InGaN/GaN QWs LEDs Using Near-Field Scanning Optical Microscopy

The size of the V-defects in the GaN/InGaN-based quantum wells blue light-emitting diode (LED) was intentionally modified from 50 nm to 300 nm. High resolution photoluminescence and electroluminescence of a single large V-defect were investigated by near-field scanning optical microscopy. The curren...

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Bibliographic Details
Main Authors: Yufeng Li, Weihan Tang, Ye Zhang, Maofeng Guo, Qiang Li, Xilin Su, Aixing Li, Feng Yun
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Nanomaterials
Subjects:
V-defect
InGaN/GaN QWs
LEDs
NSOM
quantum efficiency
Online Access:https://www.mdpi.com/2079-4991/9/4/633

Internet

https://www.mdpi.com/2079-4991/9/4/633

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