VARIABILITY ANALYSIS OF 6T AND 7T SRAM CELL IN SUB-45NM TECHNOLOGY
This paper analyses standard 6T and 7T SRAM (static random access memory) cell in light of process, voltage and temperature (PVT) variations to verify their functionality and robustness. The 7T SRAM cell consumes higher hold power due to its extra cell area required for its functionality constraint....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IIUM Press, International Islamic University Malaysia
2011-05-01
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| Series: | International Islamic University Malaysia Engineering Journal |
| Online Access: | http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/25 |