Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

<p>Abstract</p> <p>Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-progr...

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Bibliographic Details
Main Authors: Abe Shunsuke, Handa Hiroyuki, Takahashi Ryota, Imaizumi Kei, Fukidome Hirokazu, Suemitsu Maki
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Graphene
3C-SiC(111)
Si(111)
Epitaxy
Surface termination
Online Access:http://dx.doi.org/10.1007/s11671-010-9731-x

Internet

http://dx.doi.org/10.1007/s11671-010-9731-x

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