Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Abstract A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact...

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Bibliographic Details
Main Authors: Xiaomei Yao, Xutao Zhang, Tingting Kang, Zhiyong Song, Qiang Sun, Dongdong Wei, Jin Zou, Pingping Chen
Format: Article
Language:English
Published: SpringerOpen 2021-01-01
Series:Nanoscale Research Letters
Subjects:
InAsSb
NW
Photodetector
Weak light
Room temperature
Online Access:https://doi.org/10.1186/s11671-021-03476-4

Internet

https://doi.org/10.1186/s11671-021-03476-4

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