Silicon Based GeSn p-i-n Photodetector for SWIR Detection
We reported an investigation of GeSn-based p-i-n photodetectors (PDs) with a Ge<sub>0.92</sub>Sn<sub>0.08</sub> active layer grown on n-type Si (100) substrate using molecular beam epitaxy (MBE). The GeSn photodetector achieved a wide spectrum detection whose cutoff wavelengt...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7563433/ |