Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO<sub><italic>x</italic></sub>

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO<sub><italic>x</italic></sub>

We experimentally demonstrate that hysteresis of negative capacitance (NC) Ge pFETs is reduced through modulating the ferroelectric properties in HfZrO<sub>x</sub> (HZO) by changing the post annealing temperature. As annealing temperature varies from 350 &#x00B0;C to 450 &#x00B0;...

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Bibliographic Details
Main Authors: Jiuren Zhou, Yue Peng, Genquan Han, Qinglong Li, Yan Liu, Jincheng Zhang, Min Liao, Qing-Qing Sun, David Wei Zhang, Yichun Zhou, Yue Hao
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Negative capacitance
ferroelectrics
hysteresis
subthreshold swing
MOSFET
Online Access:https://ieeexplore.ieee.org/document/8076871/

Internet

https://ieeexplore.ieee.org/document/8076871/

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