Impact of Silicon Carbide Devices on the Dynamic Performance of Permanent Magnet Synchronous Motor Drive Systems for Electric Vehicles

Impact of Silicon Carbide Devices on the Dynamic Performance of Permanent Magnet Synchronous Motor Drive Systems for Electric Vehicles

This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are evaluated experimentally taking into account temperat...

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Bibliographic Details
Main Authors: Xiaofeng Ding, Min Du, Jiawei Cheng, Feida Chen, Suping Ren, Hong Guo
Format: Article
Language:English
Published: MDPI AG 2017-03-01
Series:Energies
Subjects:
silicon carbide (SiC) MOSFET
silicon (Si) IGBTs
permanent magnet synchronous motor (PMSM)
switching characteristics
dynamic performance
Online Access:http://www.mdpi.com/1996-1073/10/3/364

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http://www.mdpi.com/1996-1073/10/3/364

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