A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect
Abstract In this work, a novel GaN MIS‐HEMT (metal‐insulator‐semiconductor high electron mobility transistors) featuring a floating clamp (FC) electrode is proposed for suppressing the short‐channel effect. By inserting the FC electrode near to the drain‐side gate edge, the transverse potential at t...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-09-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12246 |