Fabrication of Coaxial Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> Heterostructure Nanowires by O<sub>2</sub> Flow-Induced Bifurcate Reactions

Fabrication of Coaxial Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> Heterostructure Nanowires by O<sub>2</sub> Flow-Induced Bifurcate Reactions

<p>Abstract</p> <p>We report on bifurcate reactions on the surface of well-aligned Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si...

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Bibliographic Details
Main Authors: Kim Ilsoo, Lee Ki-Young, Kim Ungkil, Park Yong-Hee, Park Tae-Eon, Choi Heon-Jin
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires
Coaxial heterostructure
Bifurcate reactions
Interfacial reaction
Diffusion-controlled reaction
Self-limiting oxidation
Kinetics of gas diffusion
Online Access:http://dx.doi.org/10.1007/s11671-010-9673-3

Internet

http://dx.doi.org/10.1007/s11671-010-9673-3

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