Fabrication of Coaxial Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> Heterostructure Nanowires by O<sub>2</sub> Flow-Induced Bifurcate Reactions

Fabrication of Coaxial Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> Heterostructure Nanowires by O<sub>2</sub> Flow-Induced Bifurcate Reactions

<p>Abstract</p> <p>We report on bifurcate reactions on the surface of well-aligned Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si...

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Bibliographic Details
Main Authors:	Kim Ilsoo, Lee Ki-Young, Kim Ungkil, Park Yong-Hee, Park Tae-Eon, Choi Heon-Jin
Format:	Article
Language:	English
Published:	SpringerOpen 2010-01-01
Series:	Nanoscale Research Letters
Subjects:	Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires Coaxial heterostructure Bifurcate reactions Interfacial reaction Diffusion-controlled reaction Self-limiting oxidation Kinetics of gas diffusion
Online Access:	http://dx.doi.org/10.1007/s11671-010-9673-3

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