Memristor crossbar array for binarized neural networks
Memristor crossbar arrays were fabricated based on a Ti/HfO2/Ti stack that exhibited electroforming-free behavior and low device variability in a 10 x 10 array size. The binary states of high-resistance-state and low-resistance-state in the bipolar memristor device were used for the synaptic weight...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5092177 |