Analysis of electronic structure of boron nitride nanotubes with different positions of intrinsic impurities
The pristine boron nitride nanotubes have a large direct band gap around 5 eV. This band gap can be engineered by doping. We investigate electronic structure of the doped hexagonal boron nitride (5,5) nanotubes using the linearized augmented cylindrical wave method. In particular, this work focuses...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de Eletromagnetismo
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| Series: | Journal of Microwaves, Optoelectronics and Electromagnetic Applications |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742014000200009&lng=en&tlng=en |