The Monitoring of Structural Quality of Silicon-Sapphire Interface by the Surface Photovoltage Method
Heteroepitaxial silicon-on-sapphire (SOS) wafers with a layer thickness of 200 and 600 nm were fabricated by the vapor phase epitaxy with monosilane as a precursor. The assessment of structural quality of silicon-sapphire interface was carried out by the surface photovoltage method (SPV) and X-ray...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Saint Petersburg Electrotechnical University "LETI"
2017-10-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
| Subjects: | |
| Online Access: | https://re.eltech.ru/jour/article/view/191 |