Analytical Switching Model of a 1200V SiC MOSFET in a High-Frequency Series Resonant Pulsed Power Converter for Plasma Generation
The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter. The SiC MOSFET has better electrical characteristics than Si MOSFET and it is preferable in this application. In this paper, the characteristics of compa...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8769965/ |