A Technique for Designing Variation Resilient Subthreshold Sram Cell
This paper presents a technique for designing a variability aware subthreshold SRAM cell. The architecture of the proposed cell is similar to the standard read-decoupled 8-transistor (RD8T) SRAM cell with the exception that the access FETS are replaced with transmission gates (TGs). In this work, va...
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| Format: | Article |
| Language: | English |
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IIUM Press, International Islamic University Malaysia
2013-03-01
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| Series: | International Islamic University Malaysia Engineering Journal |
| Online Access: | http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/318 |