Novel gate air cavity GaN HEMTs design for improved RF and DC performance
Studies are performed to develop physical insights into the RF and DC behavior of GaN HEMTs. In purpose of improving the current gain cutoff frequency (fT) and power gain cutoff frequency (fmax), an air cavity structure was proposed, which efficiently decreases the gate–drain capacitance and gate–so...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-10-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721007920 |