Enhancement of Room-Temperature Effective Spin Diffusion Length in a Si-Based Spin MOSFET With an Inversion Channel
We have demonstrated a Si-based bottom-gate-type spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with an electron inversion channel at room temperature and showed the enhancement of the room-temperature effective spin diffusion length by “spin drift”. Our s...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9090835/ |