Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study
Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate (E/R) for SiO2 and Si3N4; however, to attain comparable and high etch rate for both materials is challenging. In this work, we performed first-principle studies on the etching mechanism of Si3N4 in fluorocarbon/oxyge...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
JommPublish
2018-09-01
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| Series: | Journal of Microelectronic Manufacturing |
| Subjects: | |
| Online Access: | http://www.jommpublish.org/p/14/ |