Reduction of Noise Figure (Fn) on Bipolar Heterojunction Si/Si1-x Gex based on Arrangements Stripe Emitter Area (Ae) and Mole Fraction (x).

Reduction of Noise Figure (Fn) on Bipolar Heterojunction Si/Si1-x Gex based on Arrangements Stripe Emitter Area (Ae) and Mole Fraction (x).

Reduction of Noise Figure (Fn) on Bipolar Heterojunction Si/Si1-x Gex based on Arrangements Stripe EmitterArea (Ae) and Mole Fraction (x). This paper investigates the influence of stripe emitter area (Ae) and fraction mole (x)concerning about noise figure performance (FN) at HBT SiGe. It takes the s...

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Bibliographic Details
Main Authors: N.R. Puspawati, Djoko Hartanto, Tossin Alamsyah
Format: Article
Language:English
Published: Universitas Indonesia 2010-11-01
Series:Makara Seri Sains
Subjects:
fraction mole (x)
noise performance (Fn)
SiGe HBT
stripe emitter area (Ae)
Online Access:http://journal.ui.ac.id/science/article/viewFile/734/698

Internet

http://journal.ui.ac.id/science/article/viewFile/734/698

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