Experimental and Numerical Evaluation of R<sub>ON</sub> Degradation in GaN HEMTs During Pulse-Mode Operation

Experimental and Numerical Evaluation of R<sub>ON</sub> Degradation in GaN HEMTs During Pulse-Mode Operation

The on-resistance (R<sub>ON</sub>) degradation in normally-OFF GaN high electron mobility transistors has been evaluated both experimentally and by means of numerical simulations by analyzing its drift during device pulse-mode operation. Experimental data showed that the device RON measu...

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Bibliographic Details
Main Authors: Alessandro Chini, Ferdinando Iucolano
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Wide band gap semiconductors
numerical simulation
carbon doping
trapping phenomena
Online Access:https://ieeexplore.ieee.org/document/8063883/

Internet

https://ieeexplore.ieee.org/document/8063883/

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