Photothermally Activated Two-Photon Absorption in Ion-Implanted Silicon Quantum Dots in Silica Plates
The third-order nonlinear infrared and ultraviolet properties exhibited by silicon quantum dots irradiated by ultrashort pulses were studied. The samples were prepared by 1.5 MeV Si+2 ion implantation processes in high-purity silica substrates. Femtosecond z-scan measurements conducted at 830 nm wav...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2018-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2018/3470167 |