Experimental Study on Deformation Potential (<inline-formula> <tex-math notation="LaTeX">${D}_{{{ac}}}$ </tex-math></inline-formula>) in MOSFETs: Demonstration of Increased <inline-formula> <tex-math notation="LaTeX">${D}_{{{ac}}}$ </tex-math></inline-formula> at MOS Interfaces and Its Impact on Electron Mobility

Experimental Study on Deformation Potential (<inline-formula> <tex-math notation="LaTeX">${D}_{{{ac}}}$ </tex-math></inline-formula>) in MOSFETs: Demonstration of Increased <inline-formula> <tex-math notation="LaTeX">${D}_{{{ac}}}$ </tex-math></inline-formula> at MOS Interfaces and Its Impact on Electron Mobility

Deformation potential (D<sub>ac</sub>), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, back-gate biases, and device s...

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Bibliographic Details
Main Authors: Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Deformation potential
low-field mobility
acoustic phonon scattering
SOI
MOSFETs
Online Access:https://ieeexplore.ieee.org/document/7492205/

Internet

https://ieeexplore.ieee.org/document/7492205/

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