Experimental Study on Deformation Potential (<inline-formula> <tex-math notation="LaTeX">${D}_{{{ac}}}$ </tex-math></inline-formula>) in MOSFETs: Demonstration of Increased <inline-formula> <tex-math notation="LaTeX">${D}_{{{ac}}}$ </tex-math></inline-formula> at MOS Interfaces and Its Impact on Electron Mobility
Deformation potential (D<sub>ac</sub>), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, back-gate biases, and device s...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2016-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7492205/ |