Photolithographically fabricated silicon photonic crystal nanocavity photoreceiver with laterally integrated p-i-n diode
We fabricated a SiO2-clad all-silicon high-Q integration of p-i-n diode with photonic crystal nanocavity to demonstrate channel selective photoreceiver operation at a speed of 0.1 Gbs-1 for telecom wavelength light. This SiO2-clad device is photolithographically fabricated with a fabrication method...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5055577 |