Transition of spin gapless semiconductor to semiconductor and half-metal in ferromagnetic Ba2MnTeO6
A novel spin gapless semiconductor material Ba2MnTeO6 is found and reported by first-principles calculations. In this paper, we study the influence of spin orbit coupling, strain and Coulomb interaction on the properties of ferromagnetic Ba2MnTeO6 in order to test the stability of physical propertie...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2021-06-01
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Series: | Results in Physics |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721004460 |