Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe heterostructure at the source/channel interface to improve the band to band tunneling (BTBT) rate, and introduce a sandwich stack (...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-12-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/10/1/126 |