Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate

In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe heterostructure at the source/channel interface to improve the band to band tunneling (BTBT) rate, and introduce a sandwich stack (...

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Main Authors:	Haiwu Xie, Hongxia Liu, Shulong Wang, Shupeng Chen, Tao Han, Wei Li
Format:	Article
Language:	English
Published:	MDPI AG 2019-12-01
Series:	Applied Sciences
Subjects:	gate material engineering band-to-band tunneling (btbt) a sandwich stack structure (gaas/si/gaas) dual material gate heterostructure junctionless tfet (dmmg-hjltfet)
Online Access:	https://www.mdpi.com/2076-3417/10/1/126

id	doaj-93480c8282734bd9935254f8299c62cb
record_format	Article
spelling	doaj-93480c8282734bd9935254f8299c62cb2020-11-25T01:30:10ZengMDPI AGApplied Sciences2076-34172019-12-0110112610.3390/app10010126app10010126Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material GateHaiwu Xie0Hongxia Liu1Shulong Wang2Shupeng Chen3Tao Han4Wei Li5Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, the School of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe heterostructure at the source/channel interface to improve the band to band tunneling (BTBT) rate, and introduce a sandwich stack (GaAs/Si/GaAs) at the drain region to suppress the OFF-state current and ambiplolar current. Simultaneously, to further decrease ambipolar current, the gate electrode is divided into three parts namely auxiliary gate (M1), control gate (M2), and tunnel gate (M3) with workfunctions Φ<sub>M1</sub>, Φ<sub>M2</sub> and Φ<sub>M3</sub>, respectively, where Φ<sub>M1</sub> = Φ<sub>M3</sub> < Φ<sub>M2</sub>. Simulation results indicate that DMMG-HJLTFET provides superior performance in terms of logic and analog/RF as compared with other possible combinations, the ON-state current of the DMMG-HJLTFET increases up to <inline-formula> <math display="inline"> <semantics> <mrow> <mn>9.04</mn> <mo>×</mo> <mn>1</mn> <msup> <mn>0</mn> <mrow> <mo>−</mo> <mn>6</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> A/μm, and the maximum g<sub>m</sub> (which determine the analog performance of devices) of DMMG-HJLTFET is <inline-formula> <math display="inline"> <semantics> <mrow> <mn>1.11</mn> <mo>×</mo> <mn>1</mn> <msup> <mn>0</mn> <mrow> <mo>−</mo> <mn>5</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> S/μm at 1.0V drain-to-source voltage (Vds). Meanwhile, RF performance of devices depends on the cut-off frequency (f<sub>T</sub>) and gain bandwidth (GBW), and DMMG-HJLTFET could achieve a maximum f<sub>T</sub> of 5.84 GHz, and a maximum GBW of 0.39 GHz, respectively.https://www.mdpi.com/2076-3417/10/1/126gate material engineeringband-to-band tunneling (btbt)a sandwich stack structure (gaas/si/gaas)dual material gate heterostructure junctionless tfet (dmmg-hjltfet)
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Haiwu Xie Hongxia Liu Shulong Wang Shupeng Chen Tao Han Wei Li
spellingShingle	Haiwu Xie Hongxia Liu Shulong Wang Shupeng Chen Tao Han Wei Li Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate Applied Sciences gate material engineering band-to-band tunneling (btbt) a sandwich stack structure (gaas/si/gaas) dual material gate heterostructure junctionless tfet (dmmg-hjltfet)
author_facet	Haiwu Xie Hongxia Liu Shulong Wang Shupeng Chen Tao Han Wei Li
author_sort	Haiwu Xie
title	Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
title_short	Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
title_full	Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
title_fullStr	Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
title_full_unstemmed	Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
title_sort	improvement of electrical performance in heterostructure junctionless tfet based on dual material gate
publisher	MDPI AG
series	Applied Sciences
issn	2076-3417
publishDate	2019-12-01
description	In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe heterostructure at the source/channel interface to improve the band to band tunneling (BTBT) rate, and introduce a sandwich stack (GaAs/Si/GaAs) at the drain region to suppress the OFF-state current and ambiplolar current. Simultaneously, to further decrease ambipolar current, the gate electrode is divided into three parts namely auxiliary gate (M1), control gate (M2), and tunnel gate (M3) with workfunctions Φ<sub>M1</sub>, Φ<sub>M2</sub> and Φ<sub>M3</sub>, respectively, where Φ<sub>M1</sub> = Φ<sub>M3</sub> < Φ<sub>M2</sub>. Simulation results indicate that DMMG-HJLTFET provides superior performance in terms of logic and analog/RF as compared with other possible combinations, the ON-state current of the DMMG-HJLTFET increases up to <inline-formula> <math display="inline"> <semantics> <mrow> <mn>9.04</mn> <mo>×</mo> <mn>1</mn> <msup> <mn>0</mn> <mrow> <mo>−</mo> <mn>6</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> A/μm, and the maximum g<sub>m</sub> (which determine the analog performance of devices) of DMMG-HJLTFET is <inline-formula> <math display="inline"> <semantics> <mrow> <mn>1.11</mn> <mo>×</mo> <mn>1</mn> <msup> <mn>0</mn> <mrow> <mo>−</mo> <mn>5</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> S/μm at 1.0V drain-to-source voltage (Vds). Meanwhile, RF performance of devices depends on the cut-off frequency (f<sub>T</sub>) and gain bandwidth (GBW), and DMMG-HJLTFET could achieve a maximum f<sub>T</sub> of 5.84 GHz, and a maximum GBW of 0.39 GHz, respectively.
topic	gate material engineering band-to-band tunneling (btbt) a sandwich stack structure (gaas/si/gaas) dual material gate heterostructure junctionless tfet (dmmg-hjltfet)
url	https://www.mdpi.com/2076-3417/10/1/126
work_keys_str_mv	AT haiwuxie improvementofelectricalperformanceinheterostructurejunctionlesstfetbasedondualmaterialgate AT hongxialiu improvementofelectricalperformanceinheterostructurejunctionlesstfetbasedondualmaterialgate AT shulongwang improvementofelectricalperformanceinheterostructurejunctionlesstfetbasedondualmaterialgate AT shupengchen improvementofelectricalperformanceinheterostructurejunctionlesstfetbasedondualmaterialgate AT taohan improvementofelectricalperformanceinheterostructurejunctionlesstfetbasedondualmaterialgate AT weili improvementofelectricalperformanceinheterostructurejunctionlesstfetbasedondualmaterialgate
_version_	1725093143137746944

Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate

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