Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective...

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Bibliographic Details
Main Authors: C. Chuang, M. Mineharu, N. Matsumoto, M. Matsunaga, C.-W. Liu, B.-Y. Wu, Gil-Ho Kim, L.-H. Lin, Y. Ochiai, K. Watanabe, T. Taniguchi, C.-T. Liang, N. Aoki
Format: Article
Language:English
Published: Hindawi Limited 2018-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2018/5174103

Internet

http://dx.doi.org/10.1155/2018/5174103

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