Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

Abstract Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits...

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Bibliographic Details
Main Authors: Le Chang, Yen-Wei Yeh, Sheng Hang, Kangkai Tian, Jianquan Kou, Wengang Bi, Yonghui Zhang, Zi-Hui Zhang, Zhaojun Liu, Hao-Chung Kuo
Format: Article
Language:English
Published: SpringerOpen 2020-08-01
Series:Nanoscale Research Letters
Subjects:
Micro-LED
Sidewall defects
Nonradiative recombination
Current spreading
Hole injection
IQE
Online Access:http://link.springer.com/article/10.1186/s11671-020-03372-3

Internet

http://link.springer.com/article/10.1186/s11671-020-03372-3

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