AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Abstract We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN...

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Bibliographic Details
Main Authors: An-Jye Tzou, Kuo-Hsiung Chu, I-Feng Lin, Erik Østreng, Yung-Sheng Fang, Xiao-Peng Wu, Bo-Wei Wu, Chang-Hong Shen, Jia-Ming Shieh, Wen-Kuan Yeh, Chun-Yen Chang, Hao-Chung Kuo
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
GaN
High electron mobility transistor (HEMT)
Atomic layer deposition (ALD)
Current collapse
Surface passivation
Online Access:http://link.springer.com/article/10.1186/s11671-017-2082-0

Internet

http://link.springer.com/article/10.1186/s11671-017-2082-0

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