Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI puls...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4946786 |