Electro-Optical Operation of Electrical Probe Phase-Change Memory With Ultra-High Electrically Conductive Capping Layer

An electrical probe phase-change memory using an ultra-high electrically conductive capping layer allows for a successful write of the amorphous bit without thermally damaging the device. Due to the severe current spreading effect, the recorded bit, however, cannot be sensed based on the conventiona...

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Bibliographic Details
Main Authors: Lei Wang, Ci-Hui Yang, Jing Wen, Bang-Shu Xiong
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8662610/