Electro-Optical Operation of Electrical Probe Phase-Change Memory With Ultra-High Electrically Conductive Capping Layer
An electrical probe phase-change memory using an ultra-high electrically conductive capping layer allows for a successful write of the amorphous bit without thermally damaging the device. Due to the severe current spreading effect, the recorded bit, however, cannot be sensed based on the conventiona...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8662610/ |