Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in...

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Bibliographic Details
Main Authors: Laxmi Karki Gautam, Maxwell M. Junda, Hamna F. Haneef, Robert W. Collins, Nikolas J. Podraza
Format: Article
Language:English
Published: MDPI AG 2016-02-01
Series:Materials
Subjects:
spectroscopic ellipsometry
hydrogenated silicon
infrared spectra
photovoltaic devices
Online Access:http://www.mdpi.com/1996-1944/9/3/128

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http://www.mdpi.com/1996-1944/9/3/128

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