Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures
The two-step implantation of argon precursor ion (Ar<sup>+</sup>) followed by boron ion (B<sup>+</sup>) in single crystalline silicon at room temperature is discussed to activate boron implanted region by post heating at 300 followed by 400°C. The implantation of A...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9066978/ |