Broadband all-silicon hybrid plasmonic TM-pass polarizer using bend waveguides
A complementary–metal–oxide semiconductor (CMOS) compatible all-silicon TM-pass polarizer using plasmonic bends is proposed. To simplify the fabrication and be compatible with the CMOS process, we employ only two materials: silicon and silicon dioxide. Highly doped silicon is used to support the pla...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0044490 |