Modeling Statistical Dopant Fluctuations Effect on Threshold Voltage of Scaled JFET Devices
This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (V<sub>th</sub>) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to derive an analytical model...
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| Format: | Article |
| Language: | English |
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IEEE
2016-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/7384686/ |