Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface

Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface

Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semicondu...

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Bibliographic Details
Main Authors: Jiajie Lin, Tiangui You, Tingting Jin, Hao Liang, Wenjian Wan, Hao Huang, Min Zhou, Fengwen Mu, Youquan Yan, Kai Huang, Xiaomeng Zhao, Jiaxiang Zhang, Shumin Wang, Peng Gao, Xin Ou
Format: Article
Language:English
Published: AIP Publishing LLC 2020-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0004427

Internet

http://dx.doi.org/10.1063/5.0004427

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