6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Electronics and Telecommunications Research Institute (ETRI)
2017-10-01
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| Series: | ETRI Journal |
| Subjects: | |
| Online Access: | https://doi.org/10.4218/etrij.17.0116.0737 |