Electron transport characteristics of silicon nanowires by metal-assisted chemical etching
The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had impo...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2014-02-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4866578 |