Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrie...

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Bibliographic Details
Main Authors: Chaochao Fu, Xiangbiao Zhou, Yan Wang, Peng Xu, Ming Xu, Dongping Wu, Jun Luo, Chao Zhao, Shi-Li Zhang
Format: Article
Language:English
Published: MDPI AG 2016-04-01
Series:Materials
Subjects:
microwave annealing
Schottky barrier height
MOSFETs
dopant segregation
low temperature
diode
Online Access:http://www.mdpi.com/1996-1944/9/5/315

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http://www.mdpi.com/1996-1944/9/5/315

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