Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
The complex dielectric function ɛ and the E0 excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 μm thick GaN film deposited on a c-pl...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4867094 |