Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K

The complex dielectric function ɛ and the E0 excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 μm thick GaN film deposited on a c-pl...

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Main Authors:	Tae Jung Kim, Soon Yong Hwang, Jun Seok Byun, Nilesh S. Barange, Han Gyeol Park, Young Dong Kim
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4867094

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spelling	doaj-971f98bb9d254ac3a737ba1ed1c4fc162020-11-24T21:38:18ZengAIP Publishing LLCAIP Advances2158-32262014-02-0142027124027124-1110.1063/1.4867094026402ADVTemperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 KTae Jung Kim0Soon Yong Hwang1Jun Seok Byun2Nilesh S. Barange3Han Gyeol Park4Young Dong Kim5Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of KoreaNano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of KoreaNano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of KoreaNano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of KoreaNano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of KoreaNano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of KoreaThe complex dielectric function ɛ and the E0 excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 μm thick GaN film deposited on a c-plane (0001) sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ⟨ɛ⟩. At low temperature sharp E0 excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.http://dx.doi.org/10.1063/1.4867094
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tae Jung Kim Soon Yong Hwang Jun Seok Byun Nilesh S. Barange Han Gyeol Park Young Dong Kim
spellingShingle	Tae Jung Kim Soon Yong Hwang Jun Seok Byun Nilesh S. Barange Han Gyeol Park Young Dong Kim Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K AIP Advances
author_facet	Tae Jung Kim Soon Yong Hwang Jun Seok Byun Nilesh S. Barange Han Gyeol Park Young Dong Kim
author_sort	Tae Jung Kim
title	Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
title_short	Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
title_full	Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
title_fullStr	Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
title_full_unstemmed	Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
title_sort	temperature dependent dielectric function and the e0 critical points of hexagonal gan from 30 to 690 k
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2014-02-01
description	The complex dielectric function ɛ and the E0 excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 μm thick GaN film deposited on a c-plane (0001) sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ⟨ɛ⟩. At low temperature sharp E0 excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.
url	http://dx.doi.org/10.1063/1.4867094
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Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K

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