Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K
The complex dielectric function ɛ and the E0 excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 μm thick GaN film deposited on a c-pl...
Main Authors: | Tae Jung Kim, Soon Yong Hwang, Jun Seok Byun, Nilesh S. Barange, Han Gyeol Park, Young Dong Kim |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2014-02-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4867094 |
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