Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent
Specific features of the electrochemical etching of single crystal n- and p-type silicon in a non-oxidizing etching reagent (< 12 vol. % of HF) were studied. Pulsation of voltage-time dependence of etching was found. The obtained results are explained by the formation of a loose high-resistan...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2012-08-01
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| Series: | Тонкие химические технологии |
| Subjects: | |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/722 |