Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and...

Full description

Bibliographic Details
Main Authors: Khadir Abdelkader, Sengouga Nouredine, Abdelhafidi Mohamed Kamel
Format: Article
Language:English
Published: Sciendo 2019-12-01
Series:Annals of West University of Timisoara: Physics
Subjects:
sige hbt
silvaco
trapezoidal profile
current gain
cut-off frequency
maximum oscillation frequency
Online Access:https://doi.org/10.2478/awutp-2019-0002

Internet

https://doi.org/10.2478/awutp-2019-0002

Similar Items