Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and...

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Main Authors:	Khadir Abdelkader, Sengouga Nouredine, Abdelhafidi Mohamed Kamel
Format:	Article
Language:	English
Published:	Sciendo 2019-12-01
Series:	Annals of West University of Timisoara: Physics
Subjects:	sige hbt silvaco trapezoidal profile current gain cut-off frequency maximum oscillation frequency
Online Access:	https://doi.org/10.2478/awutp-2019-0002

id	doaj-97774620c5e74473898daf2ee5f0a0d5
record_format	Article
spelling	doaj-97774620c5e74473898daf2ee5f0a0d52021-09-06T19:41:29ZengSciendoAnnals of West University of Timisoara: Physics1224-97182019-12-01611223210.2478/awutp-2019-0002awutp-2019-0002Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar TransistorsKhadir Abdelkader0Sengouga Nouredine1Abdelhafidi Mohamed Kamel2Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, AlgeriaLaboratory of metallic and semiconducting materials, University of Biskra, Biskra, AlgeriaLaboratory of metallic and semiconducting materials, University of Biskra, Biskra, AlgeriaThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.https://doi.org/10.2478/awutp-2019-0002sige hbtsilvacotrapezoidal profilecurrent gaincut-off frequencymaximum oscillation frequency
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Khadir Abdelkader Sengouga Nouredine Abdelhafidi Mohamed Kamel
spellingShingle	Khadir Abdelkader Sengouga Nouredine Abdelhafidi Mohamed Kamel Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors Annals of West University of Timisoara: Physics sige hbt silvaco trapezoidal profile current gain cut-off frequency maximum oscillation frequency
author_facet	Khadir Abdelkader Sengouga Nouredine Abdelhafidi Mohamed Kamel
author_sort	Khadir Abdelkader
title	Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
title_short	Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
title_full	Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
title_fullStr	Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
title_full_unstemmed	Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
title_sort	germanium gradient optimization for high-speed silicon germanium hetero-junction bipolar transistors
publisher	Sciendo
series	Annals of West University of Timisoara: Physics
issn	1224-9718
publishDate	2019-12-01
description	The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.
topic	sige hbt silvaco trapezoidal profile current gain cut-off frequency maximum oscillation frequency
url	https://doi.org/10.2478/awutp-2019-0002
work_keys_str_mv	AT khadirabdelkader germaniumgradientoptimizationforhighspeedsilicongermaniumheterojunctionbipolartransistors AT sengouganouredine germaniumgradientoptimizationforhighspeedsilicongermaniumheterojunctionbipolartransistors AT abdelhafidimohamedkamel germaniumgradientoptimizationforhighspeedsilicongermaniumheterojunctionbipolartransistors
_version_	1717766141303062528

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

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