Research on photosensitive gate ferroelectric integrated GaN HEMT photodetector
In this paper, we take advantage of the high sensitivity of two-dimensional electron gas concentration in the heterojunction channel of a GaN high electron mobility transistor (HEMT) to device surface states and gate voltages. By integrating a HEMT with ferroelectric materials with photovoltaic effe...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0041331 |