Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Abstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (o...

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Bibliographic Details
Main Authors: Zhuo Wang, Zhao Qi, Longfei Liang, Ming Qiao, Zhaoji Li, Bo Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Electrostatic discharge (ESD)
Silicon-controlled rectifier (SCR)
Holding voltage (V h)
Latch-up
Transmission line pulse (TLP)
Online Access:http://link.springer.com/article/10.1186/s11671-019-3017-8

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http://link.springer.com/article/10.1186/s11671-019-3017-8

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