Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition pow...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-03-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/12/5/737 |